EECE 480  
Semiconductor Devices:
Physics, Design and Analysis

Fall 2011 Edition

David L. Pulfrey
Kaiser 4040

Alireza Motieifar
Kaiser 4037 (Ampere)

Tuesday & Thursday
0930h -1100h
Room MCLD 242

Office Hours
1300h - 1400h, Wednesday
Prof: 1400h - 1600h, Monday & Wednesday

Course Description
This course is about semiconductor devices of topical importance. The devices to be covered in 2011 are solar cells, light-emitting diodes, and transistors. You will learn how these devices work, how they are made, how they are designed, and how they are analyzed. For solar cells, the emphasis will be on Si multicrystalline cells. The prospects for photovoltaics as a viable source of renewable energy will be discussed. For LEDS, high-brightess and white-light diodes will be covered. The prospects for LEDs significantly reducing the energy used in general lighting will be discussed. For transistors, BJTs, HBTs, MOSFETs, MESFETs and HEMTs will be covered. You will learn which of these transistors are suited to particular applications, e.g., high-speed digital switching, high-frequency analog amplification, high-power drivers, low-noise amplification, semiconductor memory, nanoelectronics.
The objective of the course is to provide a solid foundation in the physics of semiconductors so that students will be able to not only understand current devices and exploit them in novel applications, but also appreciate the workings of new semiconductor devices as they materialize and evolve in future years. The material is presented rigorously, and this is not a survey course.

AMD: 45nm SOI FET (2009)

- "Understanding Modern Transistors and Diodes"
by D.L. Pulfrey
Available from UBC Bookstore

Mark Distribution
5 Assignments = 40%
Mid-term Exam October 20 = 10%
Final Exam = 50%

Brattain & Bardeen's point-contact germanium transistor operated as a speech amplifier with a power gain of 18 on December 23, 1947.
AT&T Bell Labs: The First Transistor (1947)

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